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VISHAY
SFH619A
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain, 300 V BVCEO
Features
* * * * High Collector-emitter Voltage (VCEO = 300 V) High Isolation Test Voltage, 5300 VRMS Standard Plastic DIP-4 Package Compatible with Toshiba TLP627
A C
1 2 4 3
C E
Agency Approvals
* UL - File No. E52744 System Code H or J * BSI IEC60950 IEC60965
i179062
Description
The SFH619A is optically coupled isolators with a Gallium Arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields.
Order Information
Part SFH619A SFH619A-X007 SFH619A-X009 Remarks CTR > 1000 %, DIP-4 CTR > 1000 %, SMD-4 (option 7) CTR > 1000 %, SMD-4 (option 9)
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Peak reverse voltage Forward continuous current Derate linearly from 25 C Power dissipation Pdiss Test condition Symbol VRM IF Value 6.0 60 1.33 100 Unit V mA mW/C mW
Output
Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector (load) current Derate linearly from 25 C Power dissipation Pdiss Test condition Symbol BVCEO BVECO IC Value 300 0.3 125 2.00 150 Unit V V mA mW/C mW
Document Number 83674 Rev. 1.3, 20-Apr-04
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SFH619A
Vishay Semiconductors Coupler
Parameter Derate linearly from 25 C Total power dissipation Isolation test voltage (between emitter and detector, standard climate: 23 C/50 % RH, DIN 50014) Creepage Clearance Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Soldering temperature max. 10 s, DIP soldering: distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tsld t=1s Ptot VISO Test condition Symbol Value 3.33 250 5300
VISHAY
Unit mW/C mW VRMS
7.0 7.0 1012 10
11
mm mm C C C
- 55 to + 150 - 55 to + 100 260
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse current Capacitance Test condition IF = 10 mA VR = 6.0 V VR = 0 V Symbol VF IR CO Min Typ. 1.2 0.02 14 Max 1.5 10 Unit V A pF
Output
Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-emitter dark current Collector-emitter capacitance Test condition ICE = 100 A IEC = 100 A VCE = 200 V, TA = 25 C VCE = 200 V, TA = 100 C VCE = 0 V, f = 1.0 MHz Symbol BVCEO BVECO ICEO ICEO CCE 39 Min 300 0.3 10 200 20 Typ. Max Unit V V nA nA pF
Coupler
Parameter Collector-emitter saturation voltage Coupling capacitance Test condition IF = 1.0 mA, IC = 10 mA Symbol VCEsat VCEsat VI-O = 0 V, f = 1.0 MHz CC 0.3 0.6 Min Typ. Max 1.0 1.2 Unit V V pF
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Document Number 83674 Rev. 1.3, 20-Apr-04
VISHAY
Current Transfer Ratio
Parameter Current Transfer Ratio Test condition IF = 1.0 mA, VCE = 1.0 V Symbol CTR Min 1000 Typ.
SFH619A
Vishay Semiconductors
Max
Unit %
Switching Characteristics
Parameter Rise time Fall time Turn-on time Turn-off time Test condition VCC = 10 V, IC = 10 mA, RL = 100 VCC = 10 V, IF = 16 mA, RL = 180 VCC = 10 V, IC = 10 mA, RL = 100 VCC = 10 V, IF = 16 mA, RL = 180 VCC = 10 V, IC = 10 mA, RL = 100 VCC = 10 V, IF = 16 mA, RL = 180 VCC = 10 V, IC = 10 mA, RL = 100 VCC = 10 V, IF = 16 mA, RL = 180 Symbol tr tr tf tf ton ton toff toff Min Typ. 3.5 1.0 14.5 20.5 4.5 1.5 29.0 53.5 Max Unit s s s s s s s s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
140
Collector Current, IC (mA)
120 TA=100C 100 80 60 40 20 0 0 5 10 15 20 25 30 35 Forward Current, IF (mA) 40 45 50 TA =- 40C TA =25C
IF
VCC RL VCE
VO
tR
IF
t ON
tF t OFF
isfh619a_01
isfh619a_04
Fig. 1 Switching Waveform and Switching Schematic
Fig. 3 Collector Current vs. Forward Current
1000.00
Collector Current, IC (mA)
90.00
Collector Current, IC (mA)
100.00 10.00 1.00 0.10 0.01 0
VCE =1.2 V VCE =1.0 V
80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 -40 -20
IF = 10 (mA)
IF = 1 (mA)
1 10 Forward Current, IF (mA)
100
0
20 40 60 Temperature, TA (C)
80
100
isfh619a_03
isfh619a_05
Fig. 2 Collector Current (mA) vs. Forward Current (mA)
Fig. 4 Collector Current vs. Ambient Temperature
Document Number 83674 Rev. 1.3, 20-Apr-04
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SFH619A
Vishay Semiconductors
VISHAY
140
Collector Current, IC (mA)
1.2 IF = 10 mA 1.0
Normalized CTR
120 100 80 60 40 20 0 0.6 0.7 0.8 0.9 1.0 1.1 Collector-Emitter Voltage, VCE (V) 1.2
isfh619a_09
0.8 0.6 0.4 0.2 0 -40
IF = 1.0 mA
-20
0
20
40
60
80
100
Temperature, TA (C)
isfh619a_06
Fig. 5 Collector Current vs. Collector Emitter Voltage
Fig. 8 Normalized CTR vs. Temperature
1000.00
VCE=300 V
1000.00
100.00
ICEO (nA)
Time Switching, s
VCE=200 V VCE=50 V
100.00
tOFF
10.00
10.00 tON
1.00
0.10 -40
isfh619a_07
1.00 -20 0 20 40 60 80 100
isfh619a_10
0.1
Temperature, TA (C)
1 Load Resistor, RL (k)
10
Fig. 6 Collector-Emitter Dark Current vs. Collector-Emitter Voltage over Temperature
Fig. 9 Switching Time vs. Load Resistor
10000
Current Transfer Ratio, CTR
VCE=1.2 V 1000 VCE=1 V
100 0.10 1.00 10.00 Forward Current, IF (mA) 100.00
isfh619a_08
Fig. 7 Current Transfer Ratio vs. Forward Current
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Document Number 83674 Rev. 1.3, 20-Apr-04
VISHAY
Package Dimensions in Inches (mm)
SFH619A
Vishay Semiconductors
2
1 pin one ID
.255 (6.48) .268 (6.81)
ISO Method A
3
4
.179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) .100 (2.54) 3-9 .300 (7.62) typ.
.230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30)
i178027
.008 (.20) .012 (.30)
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.028 (0.7) MIN.
.180 (4.6) .160 (4.1) .0040 (.102) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX.
.0098 (.249)
.020 (.51) .040 (1.02)
.012 (.30) typ.
.315 (8.00) min.
15 max.
18494
Document Number 83674 Rev. 1.3, 20-Apr-04
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SFH619A
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83674 Rev. 1.3, 20-Apr-04

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